dt s 2305 new product www. g d \ v h p l m s 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? typical esd performance 1200 v ? aec-q101 qualifiedc ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 20 0.061 at v gs = - 4.5 v - 4.4 7.6 nc 0.080 at v gs = - 2.5 v - 3.8 0.110 at v gs = - 1.8 v - 3.3 0.165 at v gs = - 1.5 v - 0.5 orderin g information: dts 2305 (lead (p b )-free and halogen-free) g to-236 (sot-23) s d top v ie w 2 3 1 dts notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.4 a t c = 70 c - 3.5 t a = 25 c - 3.7 b, c t a = 70 c - 2.9 b, c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 1.5 t a = 25 c - 1.0 b, c maximum power dissipation t c = 25 c p d 1.8 w t c = 70 c 1.1 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 55 70 s g d p-channel mosfet % 5s new product document number: 65905 s10-0542-rev. a, 08-mar-10 www. g d \ v h p l m s 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? typical esd performance v ? $ ( & 4 4 x d o l i l h g f ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices product summary v ds (v) r ds(on) ( : ) i d (a) a q g (typ.) - 20 0.061 at v gs = - 4.5 v - 4.4 7.6 nc 0.080 at v gs = - 2.5 v - 3.8 0.110 at v gs = - 1.8 v - 3.3 0.165 at v gs = - 1.5 v - 0.5 orderin g information: % 5 4 (lead (pb )-free and halogen-free) g to-236 (sot-23) s d top v iew 2 3 1 % 5 4 notes: a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.4 a t c = 70 c - 3.5 t a = 25 c - 3.7 b, c t a = 70 c - 2.9 b, c pulsed drain current i dm - 20 continuous source-drain diode current t c = 25 c i s - 1.5 t a = 25 c - 1.0 b, c maximum power dissipation t c = 25 c p d 1.8 w t c = 70 c 1.1 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t d 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 55 70
www. g d \ v h p l m s 2 DTS2305 new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 13 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 6 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.2 a 0.050 0.061 v gs = - 2.5 v, i d = - 2.8 a 0.065 0.080 v gs = - 1.8 v, i d = - 1.5 a 0.090 0.110 v gs = - 1.5 v, i d = - 0.5 a 0.110 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3.2 a 12 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 5.3 a 14 21 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 5.3 a 7.6 12 q gs 0.8 gate-drain charge q gd 3.1 gate resistance r g f = 1 mhz 0.4 2 4 k tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 4.5 v, r g = 1 0.20 0.3 s rise time t r 1.00 1.50 turn-off delay time t d(off) 4.00 6.00 fall time t f 2.00 3.00 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 i d ? - 4.3 a, v gen = - 8 v, r g = 1 0.09 0.14 rise time t r 0.40 0.60 turn-off delay time t d(off) 5.20 7.80 fall time t f 2.30 3.50 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.5 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 17 www. g d \ v h p l m s 2 document number: 65905 s10-0542-rev. a, 08-mar-10 % 5 4 new product notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ' v ds /t j i d = - 250 a - 13 mv/c v gs(th) temperature coefficient ' v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 6 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds d - 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.2 a 0.050 0.061 : v gs = - 2.5 v, i d = - 2.8 a 0.065 0.080 v gs = - 1.8 v, i d = - 1.5 a 0.090 0.110 v gs = - 1.5 v, i d = - 0.5 a 0.110 0.165 forward transconductance a g fs v ds = - 10 v, i d = - 3.2 a 12 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 5.3 a 14 21 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 5.3 a 7.6 12 q gs 0.8 gate-drain charge q gd 3.1 gate resistance r g f = 1 mhz 0.4 2 4 k : tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 : i d # - 4.3 a, v gen = - 4.5 v, r g = 1 : 0.20 0.3 s rise time t r 1.00 1.50 turn-off delay time t d(off) 4.00 6.00 fall time t f 2.00 3.00 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 2.3 : i d # - 4.3 a, v gen = - 8 v, r g = 1 : 0.09 0.14 rise time t r 0.40 0.60 turn-off delay time t d(off) 5.20 7.80 fall time t f 2.30 3.50 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.5 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 3 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 17
www. g d \ v h p l m s 3 dt s 2305 new product typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (ma) 0.0 0.3 0.6 0.9 1.2 1.5 03691215 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =1 v v gs =2 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.21 04 8 12 16 20 v gs =1. 8v v gs =4.5 v v gs =1.5 v v gs =2.5 v gate current vs. gate-source voltage transfer characteristics gate charge v gs - gate-to-so u rce v oltage ( v ) i gss - gate c u rrent (a) 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 0 3 6 9 12 15 v ds =16 v i d =5.3a v ds =5 v v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs document number: 65905 s10-0542-rev. a, 08-mar-10 www. g d \ v h p l m s 3 % 5s new product typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current v gs - gate-to-source voltage (v) i gss - gate current (ma) 0.0 0.3 0.6 0.9 1.2 1.5 03691215 t j = 25 c 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 2.5 v v gs =1v v gs =2v v gs =1.5 v v ds - drain-to-so urce v oltage ( v) - drain c u rrent (a) i d - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.00 0.03 0.06 0.09 0.12 0.15 0.18 0.21 04 8 12 16 20 v gs =1. 8v v gs =4.5 v v gs =1.5 v v gs =2.5 v gate current vs. gate-source voltage transfer characteristics gate charge v gs - gate-to-source voltage (v) i gss - gate current (a) 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.4 0. 8 1.2 1.6 2.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so urce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 0 3 6 9 12 15 v ds =16 v i d =5.3a v ds =5v v ds =10 v - gate-to-so urce v oltage ( v ) q g - total gate charge (nc) v gs
www. g d \ v h p l m s 4 dt s 2305 new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,2.5 v ;i d =3.2a v gs =1. 8v ;i d =1.5a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 0.15 0.1 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d = 3.2 a; t j = 25 c i d =0.5a;t j =25 c i d = 3.2 a; t j = 125 c i d =0.5a;t j = 125 c po w er ( w ) 0 10 20 30 40 time (s) 10 1000 0.1 0.01 0.001 100 1 soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc www. g d \ v h p l m s 4 document number: 65905 s10-0542-rev. a, 08-mar-10 % 5s new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ,2.5 v ;i d =3.2a v gs =1. 8v ;i d =1.5a t j -j u nction temperatu re (c) (normalized) - on-resistance r ds(on) - on-resistance ( ) r ds(on) v gs - gate-to-so urce v oltage ( v ) 0.00 0.03 0.06 0.09 0.12 0.15 0.18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d = 3.2 a; t j = 25 c i d =0.5a;t j =25 c i d = 3.2 a; t j = 125 c i d =0.5a;t j = 125 c power (w ) 0 10 20 30 40 time (s) 10 1000 0.1 0.01 0.001 100 1 soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v) - sou rce cu rrent (a) i s 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a (v) v gs(th) t j - temperat u re (c) v ds - drain-to-so urce v oltage ( v) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p ulse 100 ms limited byr ds(on) * bv dss limited 1ms 100 s 10 ms 1s,10s dc
www. g d \ v h p l m s 5 dt s 2305 new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 1 2 3 4 5 0 255075100125150 power derating t c - case temperat u re (c) r ( w )e w op 0.0 0.4 0. 8 1.2 1.6 2.0 25 50 75 100 125 150 document number: 65905 s10-0542-rev. a, 08-mar-10 www. g d \ v h p l m s 5 % 5s new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* t c - case temperat u re (c) i d - drain c u rrent (a) 0 1 2 3 4 5 0 255075100125150 power derating t c - case temperat u re (c) r (w )e w op 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
www. g d \ v h p l m s 6 dt s 2305 new product typical characteristics 25 c, unless otherwise noted normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =130 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 0.05 single p u lse 0.02 www. g d \ v h p l m s 6 document number: 65905 s10-0542-rev. a, 08-mar-10 % 5s new product typical characteristics 25 c, unless otherwise noted normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 square w avep u lse du ration (s) n ormalized effectiv e transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =130 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p ulse 0.02 0.05 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 square w avep u lse du ration (s) n ormalized effectiv e transient thermal impedance 1 0.1 0.01 0.05 single p ulse 0.02
package information www. g d \ v h p l m s 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pl a ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pl a ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 3 5 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0 3 46 0.040 b 0. 3 5 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3 .04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 3 8 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information document number: 71196 09-jul-01 www. g d \ v h p l m s 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 35 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 374 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479
application note www. daysemi.jp 1 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index application note document number: 72609 www. g d \ v h p l m s revision: 21-jan-08 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index
legal disclaimer notice www. daysemi.jp 1 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.etfnj revision 02-ct-12 1 document number disclaimer all prduct, prduct specificatins and data are suject t chane withut ntice t imprve reliailit, functin r desin r therwise. j5fl intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, j5fl ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. j5fl makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maimum etent permitted by applicable law, j5fl disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on j5fl s knowledge of typical requirements that are often placed on j5fl products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical eperts. product specifications do not epand or otherwise modify j5fl s terms and condit ions of purchase, including but not limited to the warranty epressed therein. ecept as epressly indicate d in writing, j5fl products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the j5fl product could result in personal inury or death. customers using or selling j5fl products not epressly indicated for use in such applications do so at their own risk. pleas e contact authorized j5fl personnel to ob tain written terms and conditions regarding products designed for such applications. no license, epress or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of j5fl . product names and markings noted herein may be trad emarks of their respective owners. material category policy j5fl intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some j5fl documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. j5fl intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some j5fl documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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